你好!欢迎来到 !
语言
当前位置: 首页>> Winbond/华邦>> 移动随机存取内存>> Low Power SDR SDRAM>> Winbond W987D2HBJA

Winbond W987D2HBJA

W987D2HBJA

Density 4Mbit x32 Status
Vcc 1.8V / 1.8V Frequency 133 / 166 MHz
Package Temperature Range -40~85c / -40~105c
Feature List W987D2HBJA

This is a 128Mb Low Power SDR SDRAM organized as 1M words x 4 banks x 32bits

产品特点

Power supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V
Data width: x32
Burst Type: Sequential or Interleave、Clock rate : 133MHz, 166MHz
Standard Self Refresh Mode
PASR、ATCSR、Power Down Mode、DPD
Programmable output buffer driver strength
Four internal banks for concurrent operation
CAS Latency: 2 and 3
Burst Length: 1、2、4 、8 and full page
Operating Temperature Range: Extended (-25°C ~ 85°C), Industrial (-40°C ~ 85°C)
Bidirectional, data strobe (DQS) is transmitted or received with data, to be used in capturing data at the receiver
Package 90VFBGA (SAC305)

编辑:admin 最后修改时间:2017-08-19 浏览:2

上一篇: Winbond W988D6FBGX
下一篇: Winbond W987D6HBGA
联系方式

0755-82591179

传真:0755-82591176

邮箱:vicky@yingtexin.net

地址:深圳市龙华区民治街道民治大道973万众润丰创业园A栋2楼A08

Copyright ? 2014-2023 All Rights Reserved.粤ICP备14043402号-4

Baidu
map